samsung elektronik introducerer ny flashbolt hbm2e hukommelse med høj båndbredde - Samsung

Samsung Electronics introducerer ny Flashbolt HBM2E hukommelse med høj båndbredde

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology, today announced its new High Bandwidth Memory (HBM2E) product at NVIDIA's GPU Technology Conference (GTC) to deliver the highest DRAM performance levels for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI).

Den nye løsning, Flashbolt, er branchens første HBM2E til at levere en 3,2 gigabits-per-sekund (Gbps) dataoverførselshastighed pr. Pin, hvilket er 33 procent hurtigere end den forrige generation HBM2. Flashbolt har en densitet på 16 GB pr. Matrice, dobbelt så stor som kapaciteten for den foregående generation. Med disse forbedringer tilbyder en enkelt Samsung HBM2E-pakke en 410 gigabyte per sekund (GBps) databåndbredde og 16 GB hukommelse. 'Flashbolt's industry-leading performance will enable enhanced solutions for next-generation data centers, artificial intelligence, machine learning, and graphics applications,' said Jinman Han, senior vice president of Memory Product Planning and Application Engineering Team at Samsung Electronics. 'We will continue to expand our premium DRAM offering, and improve our 'high-performance, high capacity, and low power' memory segment to meet market demand.'