sk hynix annoncerer sine hbm2e-hukommelsesprodukter, 460 gb / s og 16 gb pr. stak - Sk

SK Hynix annoncerer sine HBM2E-hukommelsesprodukter, 460 GB / s og 16 GB pr. Stak



SK Hynix Inc. announced today that it has developed HBM2E DRAM product with the industry's highest bandwidth. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity compared to the previous HBM2. SK Hynix's HBM2E supports over 460 GB (Gigabyte) per second bandwidth based on the 3.6 Gbps (gigabits-per-second) speed performance per pin with 1,024 data I/Os (Inputs/Outputs). Through utilization of the TSV (Through Silicon Via) technology, a maximum of eight 16-gigabit chips are vertically stacked, forming a single, dense package of 16 GB data capacity.

SK Hynix's HBM2E er en optimal hukommelsesløsning til den fjerde industrielle æra, der understøtter avancerede GPU, supercomputere, maskinindlæring og kunstig intelligenssystemer, der kræver det maksimale niveau for hukommelsesydelse. I modsætning til varer fra DRAM-produkter, der tager modul til pakkeformer og monteret på systemkort, er HBM-chip forbundet tæt sammen med processorer som GPU'er og logikchips, der kun er distanceret med få mikrometer enheder, hvilket tillader endnu hurtigere dataoverførsel. 'SK Hynix has established its technological leadership since its world's first HBM release in 2013,' said Jun-Hyun Chun, Head of HBM Business Strategy. 'SK Hynix will begin mass production in 2020, when the HBM2E market is expected to open up, and continue to strengthen its leadership in the premium DRAM market.'